200W

20pack IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 Power Transistor IRF NEW

Description: Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingFully Avalanche Rated Specification:Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 200 WMaximum Drain-Source Voltage ‘Vds’: 55 VMaximum Gate-Source Voltage ‘Vgs’: 20 VMaximum Gate-Threshold Voltage ‘Vgs(th)’: 4 VMaximum Drain Current ‘Id’: 110 AMaximum Junction Temperature (Tj): 175 °CTotal Gate Charge (Qg): 146(max) nCRise Time (tr): 101 nSDrain-Source Capacitance (Cd): 781 pFMaximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included:20 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power TransistorOn Jul 18, 2024 at 14:26:04 PDT, seller added the following information:

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